首页> 外文期刊>Facta Universitatis. Series Electronics and Energetics >Corrigendum HORIZONTAL CURRENT BIPOLAR TRANSISTOR (HCBT) – A LOW-COST, HIGH-PERFORMANCE FLEXIBLE BICMOS TECHNOLOGY FOR RF COMMUNICATION APPLICATIONS
【24h】

Corrigendum HORIZONTAL CURRENT BIPOLAR TRANSISTOR (HCBT) – A LOW-COST, HIGH-PERFORMANCE FLEXIBLE BICMOS TECHNOLOGY FOR RF COMMUNICATION APPLICATIONS

机译:更正水平电流双极晶体管(HCBT)–一种低成本,高性能,灵活的BICMOS技术,适用于RF通信应用

获取原文
           

摘要

The Editor-in-Chief has been informed that in the article Tomislav Suligoj, Marko Kori?i?, Josip ?ilak, Hidenori Mochizuki, So-Ichi Morita, Katsumi Shinomura, Hisaya Imai. Horizontal Current Bipolar Transistor (HCBT) – A Low-Cost, High-Performance Flexible BICMOS Technology for RF Communication Applications. Facta Universitatis, Series: Electronics and Energetics, Vol. 28. No 4, 2015, pp. 507-525. DOI: 10.2298/FUEE1504507S Fig. 15 with its legend has been ommited in published version of the paper. After further discussion with the corresponding author, Editor-in-Chief has decided to publish a corrigendum for this article, providing the figure and legend of Fig. 15.Link to the corrected article:?DOI:10.2298/FUEE1504507S
机译:主编已被告知,在文章Tomislav Suligoj,Marko Kori?i?,Josip?ilak,Hidenori Mochizuki,So-Ichi Morita,Kasumi Shinomura和Hisaya Imai的文章中。水平电流双极晶体管(HCBT)–一种低成本,高性能,灵活的BICMOS技术,用于RF通信应用。 Facta Universitatis,系列:电子与能量学,第1卷。 28.第4号,2015年,第507-525页。 DOI:10.2298 / FUEE1504507S图15及其图例已在本文的发行版本中省略。经过与相应作者的进一步讨论,总编辑决定发布本文的勘误,并提供了图15的图和图例。链接到更正后的文章:DOI:10.2298 / FUEE1504507S

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号