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Graphene Flakes in Arc Plasma: Conditions for the Fast Single-Layer Growth

机译:电弧等离子体中的石墨烯剥落:单层快速生长的条件

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The results of systematic numerical studies of graphene flakes growth in low-temperature arc discharge plasmas are presented. Diffusion-based growth model was developed, verified using the previously published experiments, and used to investigate the principal effects of the process parameters such as plasma density, electron temperature, surface temperature and time of growth on the size and structure of the plasma-grown graphene flakes. It was demonstrated that the higher growth temperatures result in larger graphene flakes reaching 5 μm, and simultaneously, lead to much lower density of the carbon atoms adsorbed on the flake surface. The low density of the carbon adatoms reduces the probability of the additional graphene layer nucleation on surface of growing flake, thus eventually resulting in the synthesis of the most valuable single-layered graphenes.
机译:给出了在低温电弧放电等离子体中石墨烯薄片生长的系统数值研究的结果。开发了基于扩散的生长模型,使用先前发表的实验进行了验证,并用于研究工艺参数(如等离子体密度,电子温度,表面温度和生长时间)对等离子体生长的尺寸和结构的主要影响石墨烯薄片。已经证明,较高的生长温度导致较大的石墨烯薄片达到5μm,并且同时导致吸附在薄片表面上的碳原子的密度低得多。碳原子的低密度降低了生长的薄片表面上额外的石墨烯层成核的可能性,因此最终导致合成了最有价值的单层石墨烯。

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