...
首页> 外文期刊>European Chemical Bulletin >Application of AACVD for the deposition of copper sulfide nanostructured thin film from newly synthesized copper complex
【24h】

Application of AACVD for the deposition of copper sulfide nanostructured thin film from newly synthesized copper complex

机译:AACVD在新合成铜配合物中沉积硫化铜纳米结构薄膜中的应用

获取原文
           

摘要

The copper(II) complex of N -[ethyl(butyl)carbamothioyl]-3,5-dinitrobenzamide ( 1 ) has been synthesized and characterized by elemental analysis, I.R spectroscopy and atmospheric pressure chemical ionization-mass spectrometry (MS-APCI). Thermogravimetric analysis shows the complex ( 2 ) decomposes in two-step to form copper sulfide. The complex was used as single-source precursor for the deposition of copper sulfide thin film by aerosol assisted chemical vapour deposition (AA-CVD) at 350 o C. Powder X-ray diffraction (p-XRD) pattern of thin film of complex showed the deposition of monoclinic roxbyite Cu 7 S 4 and orthorhombic anilite Cu 7 S 4 phases at 350 o C with spherical crystallites. The degree of film surface roughness was determined by atomic force microscopy (AFM). The scanning electron microscopy (SEM) and energy dispersive X-ray analysis (EDX) results showed the uniform distribution of copper sulfide in the film, which makes it useful semiconducting material on a structured surface.
机译:合成了N-[乙基(丁基)氨基甲硫酰基] -3,5-二硝基苯甲酰胺(1)的铜(II)配合物,并通过元素分析,IR光谱和大气压化学电离质谱(MS-APCI)进行了表征。热重分析表明,配合物(2)分两步分解形成硫化铜。该络合物用作单源前驱体,在350 o C下通过气溶胶辅助化学气相沉积(AA-CVD)沉积硫化铜薄膜。该络合物薄膜的粉末X射线衍射(p-XRD)图谱显示球形微晶在350 o C下沉积单斜方晶硅铝土Cu 7 S 4和正交晶苯胺体Cu 7 S 4相。膜表面粗糙度的程度通过原子力显微镜(AFM)确定。扫描电子显微镜(SEM)和能量色散X射线分析(EDX)结果表明,硫化铜在薄膜中的分布均匀,这使其在结构化表面上成为有用的半导体材料。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号