CATIONIC POLYMERIZATION OF DGEBA (DIGLYCIDYL ETHER OF BISPHENOL-A) CONTAINING NEGATIVE TONE PHOTO RESIST: CHEMISTRY AND APPLICATION.

摘要

The current paper describes cationic polymerization reaction of a negative photo resist formulated with mixture of DGEBA (Diglycidyl Ether of Bisphenol-A) and Triarylsulfonium hexafluorophosphate salts. FTIR and UV visible analysis was carried out to understand the crosslinking reaction. The formulated photo resist material was used to fabricate high aspect ratio structures up to 300 microns by using optical lithography. The formulated negative resist can be used as low cost photo resist in fabricating Lab on chip devices and in MEMS (Micro-Electro-Mechanical Systems) prototype.