LIGHT SOAKING STUDIES ON METALSEMICONDUCTOR CONTACTS

摘要

In this paper, a mathematical model is developed to obtain contact resistivity of metal-semiconductor (M-S) contact, based on the values of ideality factor and barrier height which are obtained from Currentvoltage (I-V) characteristics of the M-S contact. I-V characteristics are recorded in dark condition and after light soaking at an illumination level of 100mWcm-2, for duration of three hours. Thin films of Cd1-xZnxTe of 1m and 100nm thickness are the semiconductor materials fabricated on nickel coated glass substrates and plain glass substrates respectively for x varying from 0.0567 to 0.2210. Nickel, Aluminium, Indium, Silver and Copper are the top contact points deposited on these films. The present paper has dealt with the estimation of optimum top metallic contact and optimum x in Cd1-xZnxTe thin films with respect to light soaking studies.