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首页> 外文期刊>International Journal of Electrochemical Science >Electrochemical Properties of Spherical Hollow SnO2-TiO2-C Composite Powders Prepared by Spray Pyrolysis
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Electrochemical Properties of Spherical Hollow SnO2-TiO2-C Composite Powders Prepared by Spray Pyrolysis

机译:喷雾热解制备球形空心SnO 2 -TiO 2 -C复合粉末的电化学性能

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Hollow spherical SnO2-TiO2-C composite powders with uniform compositions are prepared by spraypyrolysis from precursor solutions containing Sn and Ti compounds along with citric acid and ethyleneglycol. The prepared composite powders are subsequently heat-treated at various temperatures.Samples treated at 400 C show the presence of amorphous structures and fine crystallites with sizesranging to a few nanometers. Crystalline peaks corresponding to rutile-like crystal structures areobserved in the XRD patterns of the composite powders treated at 600 C. The peaks in the XRDpatterns of the SnO2 phase with the rutile structure marginally shift to higher angles because of theformation of the SnO2-TiO2 solid solution. Crystals with sizes below 10 nm present in compositepowders treated at 600 C are coated with a layer of amorphous carbon. Phase separation of Sn and Ticomponents dose not occur during the crystallization of the composite powders by heat-treatment. Thecycle performances of the SnO2-TiO2-C composite powders are better than that of pure SnO2 powders-1 at a constant charge and discharge rate of 700 mA g in the voltage range 0.01.0 V. The dischargecapacities after 50 cycles for the composite powders treated at 600 C are 394, 396, 327, and 244 mAh-1 -1 g at discharge rates of 300, 1400, 2100, and 3500 mA g , respectively.
机译:通过喷雾热解法从含有Sn和Ti化合物以及柠檬酸和乙二醇的前驱体溶液中制备出具有均匀组成的空心球形SnO2-TiO2-C复合粉末。制备的复合粉末随后在不同的温度下进行热处理.400℃下处理的样品显示出非晶结构和尺寸为几纳米的细微晶粒的存在。在600℃处理的复合粉末的XRD图中观察到与金红石状晶体结构相对应的晶体峰。具有SnO2相的SnO2相的XRD图谱中的峰由于SnO2-TiO2固体的形成而略微移向较高角度。解。在600℃下处理的复合粉末中存在的尺寸小于10 nm的晶体涂有一层无定形碳。在通过热处理使复合粉末结晶过程中,不会发生Sn和Ti组分的相分离。在0.01.0 V的电压范围内,在700 mA g的恒定充放电速率下,SnO2-TiO2-C复合粉末的循环性能优于纯SnO2粉末-1。复合粉末经过50次循环后的放电容量在600 C下处理的394,396,327和244 mAh-1 -1 g的放电速率分别为300、1400、2100和3500 mA g。

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