Through-Hole Filling by Copper Electroplating Using Sodium Thiazolinyl-Dithiopropane Sulfonate as the Single Additive

摘要

The adsorption behavior of thiazolinyl-S-Cu and sodium thiazolinyl- dithiopropane sulfonate(SH110)on the copper surface was investigated using molecular dynamics (MD) simulation and atomic forcemicroscope (AFM). The electrochemical behavior of SH110 was evaluated and SH110 was used as thesingle additive in the through-hole (TH) electroplating. The results indicate that SH110 is an effectiveadditive used for TH filling. Thiazolinyl-S-Cu and SH110 could be adsorbed on copper surface. Theadsorption behavior of SH110 on copper surface indicates that SH110 is a combination of acceleratorand inhibitor. SH110 can be used as an inhibitor at the surface with strong convection, whereas it canbe used as an accelerator at the surface with weak convection. The combined approach of experimentsand MD simulation can provide an insight into the mechanism of SH110 for TH filling.