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Transport properties of iron doped bismuth silicate glass ceramics

机译:铁掺杂硅酸铋玻璃陶瓷的传输性能

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The glass ceramics of various compositions 60SiO2.(40- x)Bi2O3.xFe2O3 with x = 0, 1, 2, 3, 4 and 5 were prepared by annealing the as prepared glasses at temperature ~50oC above the glass transition temperature (Tg), in the electrically heated furnace and then hold the temperature constant for one hour. The ac conductivity of different compositions of iron doped bismuth silicate glass ceramics were studied in the wide temperature range 533 K to 713 K and frequency range 10-1 Hz to 1MHz. The temperature and frequency dependent conductivity was found to obey Jonscher’s power law all the compositions and found to increase with increase in Fe2O3 content. Various parameters like dc conductivity ( dc s ), cross -over frequency ( H w ) and frequency exponent ( s ) were estimated from theoretical fitting of experimental data of ac conductivity with Jonscher’s power law, which showed very good agreement for all the compositions. Enthalpy to dissociate the cations from original site to a charge compensating center (Hf) and enthalpy of migration (Hm) had also been estimated. The conductivity data were analyzed in terms of different theoretical models to determine the possible conduction mechanism. Analysis of the conductivity data and the frequency exponent ‘ s ’ showed that the correlated barrier hopping of electrons between Fe2+ and Fe3+ ions in the glass ceramics was suitable to describe the conduction mechanism for ac conduction. The temperature dependent dc conductivity were analyzed using the theoretical variable range hopping model (VRH) proposed by Mott which describe the hopping conduction in disordered semiconducting glass in low temperature range. The various polaron hopping parameters were also calculated. Greave’s VRH model was found to be in good agreement with experimental data.
机译:通过在高于玻璃化转变温度(Tg)约50oC的温度下退火所制得的玻璃,制备出各种组成为60SiO2。(40-x)Bi2O3.xFe2O3的x = 0、1、2、3、4和5的玻璃陶瓷。在电加热炉中,然后将温度保持一小时。在533 K至713 K的宽温度范围和10-1 Hz至1MHz的频率范围内研究了不同成分的掺铁硅酸铋铋玻璃陶瓷的交流电导率。发现温度和频率相关的电导率在所有成分中均符合Jonscher的幂定律,并随Fe2O3含量的增加而增加。根据交流电导率实验数据与Jonscher幂定律的理论拟合,估算了诸如直流电导率(dc s),交叉频率(H w)和频率指数(s)之类的各种参数,这些参数对于所有成分都表现出很好的一致性。还估计了将阳离子从原始位点解离到电荷补偿中心(Hf)的焓和迁移焓(Hm)。根据不同的理论模型分析了电导率数据,以确定可能的传导机理。对电导率数据和频率指数s的分析表明,玻璃陶瓷中Fe2 +和Fe3 +离子之间电子的相关势垒跳跃适合描述交流导电的机理。使用由Mott提出的理论可变范围跳跃模型(VRH)分析了随温度变化的直流电导率,该模型描述了无序半导体玻璃在低温范围内的跳跃传导。还计算了各种极化子跳跃参数。发现Greave的VRH模型与实验数据非常吻合。

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