Wide band gap nanocrystalline CuSCN thin films deposited by modified chemical method

摘要

Nanomaterials have immerged as an area of interest motivated by potential applications of these materials in light emitting diodes, solar cells, polarizers, optical sensors, optical data communication, optical data storage etc. We have prepared copper thiocyanate (CuSCN) thin films using modified chemical bath deposition (M-CBD) method which is a modified version of chemical bath deposition (CBD) method, at room temperature in aqueous medium. In this method the glass substrate is immersed in cationic and anionic precursors, alternatively and film growth takes place on the substrate surface. Growth of CuSCN thin films requires the Cu (I) cations as a copper ions source. This is achieved by complexing Cu (II) ions using Na2S2O3. The anion source KSCN as thiocyanate ions. The deposited films were characterized by different characterization techniques to study structural, surface morphological and optical properties. Obtained CuSCN thin films exhibits good crystallinity, high purity, dense and uniform morphology with an average crystallite size 23 nm showing rhombohedral structure with direct band gap 3.9 eV.