Influence of Nanoparticles in PZT Ferroelectric Material Properties and Their Applications to Memory Devices

摘要

Ferroelctrics are technologically important materials, particularly for their applications in ferroelectric random access memory, based on semiconductor integrated technology have been a great success. Furthermore, these RAMS are very sensitive to radiation and this is detrimental for military and space applications. The properties of the layered perovskite ferroelectrics can be enhanced by addition or substitution of alternative cations. Among the important ferroelectric materials lead zirconate titanate (PZT), which is part of the solid solution formed between ferroelectric lead titanate and anti-ferroelectric lead zirconate with different compositions are used for different applications. Recent works indicate the influence of nanoparticles in PZT properties like decrease of synthesizing temperature, electrical conductivity and low dielectric loss. These materials will be the future ferroelectric materials for noval applications. The present paper Include a thorough study of these materials to finding out reasons for the improvement ferroelectric material properties in the nano scale and their optimization techniques for better applications.