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Finite Conductivity Effects in Electrostatic Force Microscopy on Thin Dielectric Films: A Theoretical Model

机译:静电力显微镜下介电薄膜上有限电导率效应的理论模型

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A study of the electrostatic force between an Electrostatic Force Microscope tip and a dielectric thin film with finite conductivity is presented. By using the Thomas-Fermi approximation and the method of image charges, we calculate the electrostatic potential and force as a function of the thin film screening length, which is a magnitude related to the amount of free charge in the thin film and is defined as the maximum length that the electric field is able to penetrate in the sample. We show the microscope’s signal on dielectric films can change significantly in the presence of a finite conductivity even in the limit of large screening lengths. This is particularly relevant in determining the effective dielectric constant of thin films from Electrostatic Force Microscopy measurements. According to our model, for example, a small conductivity can induce an error of more than two orders of magnitude in the determination of the dielectric constant of a material. Finally, we suggest a method to discriminate between permittivity and conductivity effects by analyzing the dependence of the signal with the tip-sample distance.
机译:提出了对静电力显微镜尖端和具有有限电导率的介电薄膜之间的静电力的研究。通过使用Thomas-Fermi逼近和图像电荷方法,我们计算出静电势和力与薄膜屏蔽长度的关系,该长度与薄膜中的自由电荷量有关,定义为电场能够穿透样品的最大长度。我们显示,在有限电导率的情况下,即使在大屏幕长度的限制下,电介质膜上的显微镜信号也会发生显着变化。这在通过静电力显微镜测量确定薄膜的有效介电常数时特别重要。例如,根据我们的模型,较小的电导率会在确定材料的介电常数时引起超过两个数量级的误差。最后,我们提出了一种通过分析信号与尖端采样距离之间的相关性来区分介电常数和电导率效应的方法。

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