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A class of random multiple bits in a byte error correcting and single byte error detecting (S/sub t/b/EC-S/sub b/ED) codes

机译:字节纠错和单字节错误检测(S / sub t / b / EC-S / sub b / ED)码中的一类随机多位

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Correcting multiple random bit errors that corrupt a single DRAM chip becomes very important in certain applications, such as semiconductor memories used in computer and communication systems, mobile systems, aircraft, and satellites. This is because, in these applications, the presence of strong electromagnetic waves in the environment or the bombardment of an energetic particle on a DRAM chip is highly likely to upset more than just one bit stored in that chip. On the other hand, entire chip failures are often presumed to be less likely events and, in most applications, detection of errors caused by single chip failures are preferred to correction due to check bit length considerations. Under this situation, codes capable of correcting random multiple bit errors that are confined to a single chip output and simultaneously detecting errors caused by single chip failures are attractive for application in high speed memory systems. This paper proposes a class of codes called Single t/b-error Correcting-Single b-bit byte Error Detecting (S/sub t/b/EC-S/sub b/ED) codes which have the capability of correcting random t-bit errors occurring within a single b-bit byte and simultaneously indicating single b-bit byte errors. For the practical case where the chip data output is 8 bits, i.e., b = 8, the S/sub 3/8/EC-S/sub 8/ED code proposed in this paper, for example, requires only 12 check bits at information length 64 bits. Furthermore, this S/sub 3/8/EC-S/sub 8/ED code is capable of correcting errors caused by single subarray data faults, i.e., single 4-bit byte errors, as well. This paper also shows that perfect S/sub (b-t)/b/EC-S/sub b/ED codes, i.e., perfect S/sub t/b/EC-S/sub b/ED codes for the case where t = b - 1, do exist and provides a theorem to construct these codes.
机译:在某些应用中,校正损坏单个DRAM芯片的多个随机位错误变得非常重要,例如在计算机和通信系统,移动系统,飞机和卫星中使用的半导体存储器。这是因为,在这些应用中,环境中强电磁波的存在或DRAM芯片上高能粒子的轰击极有可能使存储在该芯片中的不仅仅是一位。另一方面,通常认为整个芯片故障是不太可能发生的事件,并且在大多数应用中,由于检查位长度的考虑,检测由单芯片故障引起的错误优于校正。在这种情况下,能够校正限于单个芯片输出的随机多位错误并同时检测由单个芯片故障引起的错误的代码对于高速存储系统中的应用很有吸引力。本文提出了一类称为单t / b纠错的代码-单b位字节错误检测(S / sub t / b / EC-S / sub b / ED)代码,它们具有纠正随机t-b的能力。位错误出现在单个b位字节内,同时指示单个b位字节错误。对于芯片数据输出为8位(即b = 8)的实际情况,例如,本文提出的S / sub 3/8 / EC-S / sub 8 / ED代码仅需要12位校验位。信息长度64位。此外,该S / sub 3/8 / EC-S / sub 8 / ED代码也能够校正由单个子阵列数据故障引起的错误,即,单个4位字节错误。本文还显示了完美的S / sub(bt)/ b / EC-S / sub b / ED代码,即对于t =的情况,完美的S / sub t / b / EC-S / sub b / ED代码b-1存在并且提供了构造这些代码的定理。

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