65 nm sub-threshold logic standard cell library using quasi-Schmitt-trigger design scheme and inverse narrow width effect aware sizing

摘要

In this study, the authors propose a sub-threshold standard cell library in which the quintessence is a quasi-Schmitt-trigger logic design scheme and the inverse narrow width effect aware sizing method. The techniques can improve the I-on-to-I-off ratio of the logic cells effectively and provide a significant suppression in leakage current, enhancing the robustness of the circuits. Simulation results show that the NAND3 and NOR3 logics with the new techniques achieve 40-60% and 30-50% reductions in leakage power compared with conventional logic circuits, respectively, when the voltage is scaled down to sub-threshold region. Again, they also exhibit considerable improvements in process variation immunity and power-delay product.