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Wet-chemical approach for the halogenation of hydrogenated boron-doped diamond electrodes

机译:湿化学法卤化氢化硼掺杂金刚石电极

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摘要

Brominated and chlorinated boron-doped diamond electrodes were prepared through a radical substitution reaction and reacted further with alkyl-Grignard reagents.rnMuch attention is currently being paid to the chemical modification of solid substrate surfaces due to their utility as model systems for understanding electron transfer in molecular electronics, bioelectronics, and sensors, among other applications. Immense research effort has been devoted especially to functionalising semiconductor surfaces. In the case of silicon, various strategies for the introduction of diverse functionalities can be readily employed. Still, the chemical stability of the semiconductor/organic interface is limited as surface-active electronic defects are easily formed. Some of these disadvantages can be overcome by using diamond.
机译:溴化和氯化硼掺杂的金刚石电极是通过自由基取代反应制备的,并与烷基格利雅试剂进一步反应。由于固体基体表面可作为模型系统用于理解电子的转移,目前正在引起人们的广泛关注。分子电子,生物电子和传感器等。特别是在功能化半导体表面方面已经进行了巨大的研究。在硅的情况下,可以容易地采用用于引入各种功能的各种策略。然而,由于容易形成表面活性电子缺陷,因此限制了半导体/有机界面的化学稳定性。这些缺点中的一些可以通过使用金刚石来克服。

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  • 来源
    《Chemical Communications》 |2008年第47期|6294-6296|共3页
  • 作者单位

    Institut de Recherche Interdisciplinaire (IRI, USR-CNRS 3078) and Institut d'Electronique, de Microe'lectronique et de Nanotechnologie (IEMN, UMR-CNRS 8520), Cite Scientifique, Avenue Poincare-BP 60069, 59652 Villeneuve d'Ascq, France School of Materials Science and Engineering, Shandong University, 73 Jingshi Road, Jinan, Shandong Province, P. R. China;

    Institut de Recherche Interdisciplinaire (IRI, USR-CNRS 3078) and Institut d'Electronique, de Microe'lectronique et de Nanotechnologie (IEMN, UMR-CNRS 8520), Cite Scientifique, Avenue Poincare-BP 60069, 59652 Villeneuve d'Ascq, France;

    Institut de Recherche Interdisciplinaire (IRI, USR-CNRS 3078) and Institut d'Electronique, de Microe'lectronique et de Nanotechnologie (IEMN, UMR-CNRS 8520), Cite Scientifique, Avenue Poincare-BP 60069, 59652 Villeneuve d'Ascq, France;

    Institut de Physique et Chimie des MateriauxjGroupe Surfaces et Interfaces (IPCMS/GSI), UMR 7504 CNRS. Bat 69, 23 rue du Loess, BP 43, 67034 Strasbourg, France;

    School of Materials Science and Engineering, Shandong University, 73 Jingshi Road, Jinan, Shandong Province, P. R. China;

    Institut de Recherche Interdisciplinaire (IRI, USR-CNRS 3078) and Institut d'Electronique, de Microe'lectronique et de Nanotechnologie (IEMN, UMR-CNRS 8520), Cite Scientifique, Avenue Poincare-BP 60069, 59652 Villeneuve d'Ascq, France;

    Institut de Recherche Interdisciplinaire (IRI, USR-CNRS 3078) and Institut d'Electronique, de Microe'lectronique et de Nanotechnologie (IEMN, UMR-CNRS 8520), Cite Scientifique, Avenue Poincare-BP 60069, 59652 Villeneuve d'Ascq, France Laboratoire d'Electrochimie et de Physicochimie des Materiaux et des Interfaces (LEPMI), CNRS-INPG-UJF, 1130 rue de la piscine, BP 75, 38402 St. Martin d'Heres Cedex, France;

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