Highly ordered GaN-based nanowire arrays grown on patterned (100) silicon and their optical propertiest

Xingfu Wang; Jinhui Tong; Xin Chen; Bijun Zhao; Zhiwei Ren; Danwei Li; Xiangjing Zhuo; Jun Zhang; Hanxiang Yi; Chao Liu; Fang Fang; Shuti Li

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Highly ordered GaN-based nanowire arrays grown on patterned (100) silicon and their optical propertiest

机译：在图案化（100）硅酮上生长的高度有序的GaN基纳米线阵列及其光学特性

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摘要

Arrays of GaN-based nanowires have been synthesized on patterned silicon without a catalyst The spatial density, length and average radius of the nanowires can be well-controlled. The GaN core contains two semipolar facets and a controllable polar facet. The nanowire hetero-structures exhibit excellent laser behavior.

机译：在没有催化剂的情况下，已经在图案化的硅上合成了基于GaN的纳米线的阵列。可以很好地控制纳米线的空间密度，长度和平均半径。 GaN核心包含两个半极性小平面和一个可控制的极性小平面。纳米线异质结构表现出优异的激光行为。

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来源
《Chemical Communications》 |2014年第6期|682-684|共3页
作者
Xingfu Wang; Jinhui Tong; Xin Chen; Bijun Zhao; Zhiwei Ren; Danwei Li; Xiangjing Zhuo; Jun Zhang; Hanxiang Yi; Chao Liu; Fang Fang; Shuti Li;
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作者单位

Laboratory of Nanophotonic Functional Materials and Devices, Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou, 510631, People's Republic of China;

Laboratory of Nanophotonic Functional Materials and Devices, Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou, 510631, People's Republic of China;

Laboratory of Nanophotonic Functional Materials and Devices, Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou, 510631, People's Republic of China;

Laboratory of Nanophotonic Functional Materials and Devices, Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou, 510631, People's Republic of China;

Laboratory of Nanophotonic Functional Materials and Devices, Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou, 510631, People's Republic of China;

Laboratory of Nanophotonic Functional Materials and Devices, Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou, 510631, People's Republic of China;

Laboratory of Nanophotonic Functional Materials and Devices, Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou, 510631, People's Republic of China;

Laboratory of Nanophotonic Functional Materials and Devices, Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou, 510631, People's Republic of China;

Laboratory of Nanophotonic Functional Materials and Devices, Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou, 510631, People's Republic of China;

Laboratory of Nanophotonic Functional Materials and Devices, Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou, 510631, People's Republic of China;

Gold Medal Analytical & Testing Group, 511340, People's Republic of China;

Laboratory of Nanophotonic Functional Materials and Devices, Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou, 510631, People's Republic of China;

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4. Optical Properties of Ge Nanowires Grown on Silicon (100) and (111) Substrates [C] . B. V. Kamenev, V. Sharma, L. Tsybeskov, International Symposium on Nanoscale Devices, Materials, and Biological Systems: Fundamentals and Applications . 2005

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Highly ordered GaN-based nanowire arrays grown on patterned (100) silicon and their optical propertiest

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