Triple-Gate IGBT Power Chip to Lower Switching Loss

摘要

Toshiba Corporation has developed a prototype triple-gate insulated-gate bipolar transistor (IGBT), which reduces overall power loss by up to 40.5 percent when switching On and Off (switching losses), or the process of allowing and stopping electricity flow, in power semiconductors used to control electric power.It is difficult to reduce power loss in IGBT, due to a trade-off, whereby reducing the loss when the IGBT is On (conduction losses) increases switching loss. Toshiba took on this problem by developing a silicon IGBT with a new structure consisting of three gate electrodes and gate control technology that delivers high-accuracy gate electrode switching. The new device reduces turn-On loss by 50 percent and turn-Off loss by 28 percent, an overall reduction of up to 40.5 percent against a conventional single-gate electrode IGBT, with no increase in conduction losses.Improving the energy efficiency of power semiconductors is seen as essential for realizing carbon neutrality, particularly by achieving higher-efficiency IGBT, power semiconductors used in many products and equipment. The new technology is expected to boost the efficiency of power converters in electrical systems, including renewable energy systems, electric vehicles, railroads, and industrial equipment.Power semiconductors that control electric power flows are used in every aspect of power generation, transmission, storage, and optimal use, and are crucial for ensuring power supply stability and reducing consumption. In recent years, the power semiconductor market has expanded with the increasing popularity of electric vehicles and the wider use of renewable energy sources, both steps pursue carbon-neutral economy. In October 2020, the Japanese government set the goal of achieving a carbon-neutral Japan by 2050, and initiatives like this are expected to spur further market growth.