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Property improvement of pulsed laser deposited boron carbide films by pulse shortening

机译:通过缩短脉冲来改善脉冲激光沉积碳化硼薄膜的性能

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Growth characteristics and surface morphology of boron carbide films fabricated by ablating a B4C target in high vacuum with a traditional KrF excimer laser and a high brightness hybrid dye/excimer laser system emitting at the same wavelength while delivering 700 fs pulses are compared. The ultrashort pulse processing is highly effective. Energy densities between 0.25 and 2 J cm(-2) result in apparent growth rates ranging from 0.017 to 0.085 nm/pulse. Ablation with nanosecond pulses of one order of magnitude higher energy densities yields smaller growth rates, the figures increase from 0.002 to 0.016 nm/pulse within the 2-14.3 J cm(-2) fluence window. 2D thickness maps derived from variable angle spectroscopic ellipsometry reveal that, when ablating with sub-ps pulses, the spot size rather than the energy density determines both the deposition rate and the angular distribution of film material. Pulse shortening leads to significant improvement in surface morphology, as well. While droplets with number densities ranging from 1 X 10(4) to 7 x 10(4) mm(-2) deteriorate the surface of the films deposited by the KrF excimer laser, sub-ps pulses produce practically droplet-free films. The absence of droplets has also a beneficial effect on the stoichiometry and homogeneity of the films fabricated by ultrashort pulses. (c) 2005 Elsevier B.V. All rights reserved.
机译:比较了用传统的KrF准分子激光器和在发射700 fs脉冲时发射相同波长的高亮度混合染料/准分子激光系统在高真空下烧蚀B4C靶而制成的碳化硼薄膜的生长特性和表面形貌。超短脉冲处理非常有效。 0.25和2 J cm(-2)之间的能量密度导致表观生长速率范围为0.017至0.085 nm /脉冲。用较高能量密度的一个数量级的纳秒脉冲烧蚀会产生较小的生长速率,该数字在2-14.3 J cm(-2)能量密度窗口内从0.002 nm /脉冲增加至0.016 nm /脉冲。从可变角度光谱椭圆仪获得的2D厚度图显示,当用亚ps脉冲消融时,光斑大小而非能量密度决定了薄膜材料的沉积速率和角分布。脉冲缩短也导致表面形态的显着改善。虽然数密度范围从1 X 10(4)到7 x 10(4)mm(-2)的液滴会使KrF受激准分子激光器沉积的薄膜表面恶化,但亚ps脉冲会产生几乎无液滴的薄膜。液滴的不存在对由超短脉冲制造的薄膜的化学计量和均匀性也具有有益的影响。 (c)2005 Elsevier B.V.保留所有权利。

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