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Realization of controllable etching for ZnO film by NH_4Cl aqueous solution and its influence on optical and electrical properties

机译:NH_4Cl水溶液对ZnO薄膜可控刻蚀的实现及其对光电性能的影响。

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摘要

ZnO films were deposited on c-plane Al_2O_3 substrates by pulsed laser deposition. The etching treatments for as-grown ZnO films were performed in NH_4Cl aqueous solution as a function of NH_4Cl concentration and etching time. It was found that NH_4Cl solution is an appropriate candidate for ZnO wet etching because of its controllable and moderate etching rate. The influence of etching treatment on the morphology, optical and electrical properties of the ZnO films has been investigated systematically by means of X-ray diffraction, atomic force microscope, photoluminescence and Hall effect. The results indicated that the surface morphology and optical properties of the films were highly influenced by etching treatment.
机译:ZnO薄膜通过脉冲激光沉积法沉积在c平面Al_2O_3衬底上。根据NH_4Cl浓度和蚀刻时间,在NH_4Cl水溶液中对生长的ZnO膜进行蚀刻处理。发现NH_4Cl溶液由于其可控且适中的蚀刻速率而适合用于ZnO湿法蚀刻。通过X射线衍射,原子力显微镜,光致发光和霍尔效应等手段,系统地研究了刻蚀处理对ZnO薄膜形貌,光学和电学性质的影响。结果表明,刻蚀处理对薄膜的表面形貌和光学性能有很大影响。

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