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Physical Properties Of Zns Thin Films Prepared By Chemical Bath Deposition

机译:化学浴沉积制备Zns薄膜的物理性质

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Zinc sulphide thin films are deposited on SnO_2/glass using the chemical bath deposition technique. X-ray diffraction and atomic force microscopy are used to characterize the structure of the films; the surface composition of the films is studied by Auger electrons spectroscopy, the work function and the photovoltage are investigated by the Kelvin method. Using these techniques, we specify the effect of pH solution and heat treatment in vacuum at 500 ℃. The cubic structure corresponding to the (111) planes of β-ZnS is obtained for pH equal to 10. The work function (Φ_(material) - Φ_(probe)) for ZnS deposited at pH 10 is equal to -152 meV. Annealing at 500 ℃ increases Φ_m (by about 43 meV) and induces the formation of a negative surface barrier. In all cases, Auger spectra indicate that the surface composition of zinc sulphide thin films exhibits the presence of the constituent elements Zn and S as well as C and O as impurity elements.
机译:使用化学浴沉积技术将硫化锌薄膜沉积在SnO_2 /玻璃上。 X射线衍射和原子力显微镜用于表征膜的结构。通过俄歇电子能谱研究了薄膜的表面组成,并采用开尔文方法研究了功函数和光电压。使用这些技术,我们指定了pH溶液和在500℃的真空中进行热处理的效果。当pH等于10时,获得与β-ZnS(111)平面相对应的立方结构。在pH 10时沉积的ZnS的功函数(Φ_(材料)-Φ_(探针))等于-152 meV。在500℃退火会使Φ_m(增加约43 meV)并引起负表面势垒的形成。在所有情况下,俄歇光谱表明,硫化锌薄膜的表面组成表现出存在构成元素Zn和S以及C和O作为杂质元素。

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