Electrical And Piezoresistive Properties Of Ion Beam Deposited Dlc Films

摘要

In present study diamond like carbon (DLC) films were deposited by closed drift ion source from the acetylene gas. The electrical and piezoresistive properties of ion beam synthesized DLC films were investigated. Diode-like current-voltage characteristics were observed both for DLCSi and DLC/pSi heterostructures. This fact was explained by high density of the irradiation-induced defects at the DLC/Si interface. Ohmic conductivity was observed for DLCSi heterostructure and metal/DLC/metal structure at low electric fields. At higher electric fields forward current transport was explained by Schottky emission and Poole-Frenkel emission for the DLCSi heterostructures and by Schottky emission and/or space charge limited currents for the DLC/pSi heterostructures. Strong dependence of the diamond like carbon film resistivity on temperature has been observed. Variable range hopping current transport mechanism at low electric field was revealed. Diamond like carbon piezoresistive elements with a gauge factor in 12-19 range were fabricated.