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Photoluminescence and magnetic properties of Fe-doped ZnS nano-particles synthesized by chemical co-precipitation

机译:化学共沉淀法合成掺铁的ZnS纳米粒子的光致发光和磁性

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摘要

This paper is focusing on the synthesis of Zni_xFe_xS nano-particles with x=0, 0.1 and 0.2 by chemical co-precipitation method, the prepared of which are characterized by XRD, EDS, TEM, PL, magnetization versus field behavior and M-T curve. In the XRD patterns, Zni_xFe_xS nano-particles are shown of cubic zinc blende structure, and the broadening diffraction peaks consistent with the small-size characteristic of nano-materials. The diameter of nano-particles is between 3.3 and 5.5 nm according to the HR-TEM images. The EDS data confirm the existence of Fe ions in Fe-doped ZnS nanoparticles. There we found that Fe-doping did not import new energy bands or defect states, but reduced the intensity of PL peaks. The magnetization versus field behaviors were illustrated by the M-H curves at both 5 K and 300 K, respectively, where no remanence or coercive force was observed. This phenomenon indicates that the Zni_xFe_xS (x=0.1) nano-particles are superparamagnetic. The zero-field-cooled (ZFC) and field-cooled (FC) magnetization curves further reveal that the blocking temperature (TB) of the superparamagnetic behavior might be below 5 K.
机译:本文重点研究了通过化学共沉淀法合成x = 0、0.1和0.2的Zni_xFe_xS纳米粒子,并通过XRD,EDS,TEM,PL,磁化场效应和M-T曲线对其进行了表征。在XRD图谱中,Zni_xFe_xS纳米颗粒显示为立方锌共混物结构,并且加宽的衍射峰与纳米材料的小尺寸特征一致。根据HR-TEM图像,纳米粒子的直径在3.3至5.5nm之间。 EDS数据证实了掺杂Fe的ZnS纳米颗粒中存在Fe离子。在那里我们发现,掺杂铁不会引入新的能带或缺陷态,但是会降低PL峰的强度。磁化强度与磁场行为分别由5 K和300 K处的M-H曲线表示,其中未观察到剩磁或矫顽力。此现象表明Zni_xFe_xS(x = 0.1)纳米粒子是超顺磁性的。零场冷(ZFC)和场冷(FC)磁化曲线进一步表明,超顺磁行为的阻断温度(TB)可能低于5 K.

著录项

  • 来源
    《Applied Surface Science》 |2011年第21期|p.8762-8766|共5页
  • 作者单位

    School of Materials Science and Engineering, Sichuan University, Chengdu 610064, Sichuan, PR China;

    School of Materials Science and Engineering, Sichuan University, Chengdu 610064, Sichuan, PR China;

    School of Materials Science and Engineering, Sichuan University, Chengdu 610064, Sichuan, PR China;

    School of Materials Science and Engineering, Sichuan University, Chengdu 610064, Sichuan, PR China;

    School of Materials Science and Engineering, Sichuan University, Chengdu 610064, Sichuan, PR China;

    School of Materials Science and Engineering, Sichuan University, Chengdu 610064, Sichuan, PR China;

    School of Materials Science and Engineering, Sichuan University, Chengdu 610064, Sichuan, PR China;

    School of Materials Science and Engineering, Sichuan University, Chengdu 610064, Sichuan, PR China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    tm-doped ii-vi semiconductors; dms; superparamagnetic behavior;

    机译:掺杂tm的ii-vi半导体;dms;超顺磁行为;

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