机译:常压等离子体间歇刻蚀后聚偏二氟乙烯多孔膜的两性性
Department of Chemical Engineering, Chungnam National University, 220 Gung-Dong, Yuseong-Cu, Daejeon 305-764, South Korea;
Department of Chemical Engineering, Chungnam National University, 220 Gung-Dong, Yuseong-Cu, Daejeon 305-764, South Korea;
Clean Energy Research Department, Korea Institute of Energy Research, 71-2Jang-dong, Yuseong-gu, Daejeon 305-343, South Korea;
Clean Energy Research Department, Korea Institute of Energy Research, 71-2Jang-dong, Yuseong-gu, Daejeon 305-343, South Korea;
amphiphobic surface; cassie theory; morphology; XPS; owens-wendt method; contact angle;
机译:常压氩等离子体刻蚀铜酞菁(CuPc)/ C_6o异质结薄膜太阳能电池的旋涂3,4-聚乙烯二氧噻吩:聚苯乙烯磺酸(PEDOT:PSS)薄膜
机译:用于大面积薄膜沉积和蚀刻的常压等离子体
机译:大气压等离子体预处理对聚对苯二甲酸乙二酯织物和薄膜碱性蚀刻的协同作用
机译:加工参数对聚乙烯醇膜大气压等离子体蚀刻的影响
机译:聚偏二氟乙烯薄膜测量螺旋桨叶片非定常压力的实验技术的设计与开发
机译:溅射沉积氟化钇薄膜的结构和氟等离子体刻蚀行为
机译:基于多孔聚偏二氟乙烯薄膜的压佐 - 活性复合系统和电极电极的聚合物层