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Annealing temperature effect on the properties of mercury-doped TiO_2 films prepared by sol-gel dip-coating technique

机译:退火温度对溶胶-凝胶浸涂法制备掺汞TiO_2薄膜性能的影响

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摘要

This work presents the annealing temperature effect on the properties of mercury (Hg)-doped titanium dioxide (TiO_2). Thin films and polycrystalline powders have been prepared by sol-gel process. The structure, surface morphology and optical properties, as a function of the annealing temperature, have been studied by atomic force microscopy (AFM), Raman, reflectance and ellipsometric spectroscopies. In order to determine the transformation points, we have analyzed the xerogel-obtained powder by differential scanning calorimetry (DSC). Raman spectroscopy shows the crystalline anatase and rutile phases for the films annealed at 400 ℃ and 1000 ℃ respectively. The AFM surface morphology results indicate that the particle size increases from 14 to 57 nm by increasing the annealing temperature. The complex index and the optical band gap (E_g) of the films were determined by the spectroscopic ellipsometry analysis. We have found that the optical band gap decreases by increasing the annealing temperature.
机译:这项工作提出了退火温度对掺汞(Hg)的二氧化钛(TiO_2)的性能的影响。薄膜和多晶粉末已经通过溶胶-凝胶法制备。已经通过原子力显微镜(AFM),拉曼光谱,反射率和椭偏光谱学研究了作为退火温度的函数的结构,表面形态和光学性质。为了确定转变点,我们通过差示扫描量热法(DSC)分析了由干凝胶获得的粉末。拉曼光谱显示了分别在400℃和1000℃退火的薄膜的晶型锐钛矿相和金红石相。 AFM表面形态结果表明,通过提高退火温度,粒径从14nm增加到57nm。膜的复折射率和光学带隙(E_g)通过光谱椭圆偏振分析法确定。我们发现,通过提高退火温度,光学带隙减小。

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  • 来源
    《Applied Surface Science》 |2011年第13期|p.5529-5534|共6页
  • 作者单位

    Departement de Medecine, Faculte de Medecine, Universite Hadj LakhdarBatna, Batna, Algeria,Laboratoire de Photovoltdique de Semi-conducteurs et de Nanostructures, Centre de Recherche et des Technologies de I'Energie (CRTEn), BP. 95, Hammam-Lif 2050, Tunisia;

    Laboratoire de Photovoltdique de Semi-conducteurs et de Nanostructures, Centre de Recherche et des Technologies de I'Energie (CRTEn), BP. 95, Hammam-Lif 2050, Tunisia;

    Departement de Medecine, Faculte de Medecine, Universite Hadj LakhdarBatna, Batna, Algeria,Laboratoire de Photovoltdique de Semi-conducteurs et de Nanostructures, Centre de Recherche et des Technologies de I'Energie (CRTEn), BP. 95, Hammam-Lif 2050, Tunisia;

    Laboratoire de Photovoltdique de Semi-conducteurs et de Nanostructures, Centre de Recherche et des Technologies de I'Energie (CRTEn), BP. 95, Hammam-Lif 2050, Tunisia;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    TiO_2; Thin films; Sol-gel; Hg-doped; Anatase; Band gap; Annealing temperature;

    机译:TiO_2;薄膜;溶胶凝胶;Hg掺杂;锐钛矿;能带隙;退火温度;

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