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Control of surface ripple amplitude in ion beam sputtered polycrystalline cobalt films

机译:离子束溅射多晶钴膜表面波纹幅度的控制

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摘要

We have grown both polycrystalline and partially textured cobalt films by magnetron sputter deposition in the range of thickness (50-200 nm). Kinetic roughening of the growing film leads to a controlled rms surface roughness values (1 -6 nm) increasing with the as-grown film thickness. Ion erosion of a low energy 1 keV Ar+ beam at glancing incidence (80°) on the cobalt film changes the surface morphology to a ripple pattern of nanometric wavelength. The wavelength evolution at relatively low fluency is strongly dependent on the initial surface topography (a wavelength selection mechanism hereby confirmed in polycrystalline rough surfaces and based on the shadowing instability). At sufficiently large fluency, the ripple wavelength steadily increases on a coarsening regime and does not recall the virgin surface morphology. Remarkably, the use of a rough virgin surface makes the ripple amplitude in the final pattern can be controllably increased without affecting the ripple wavelength.
机译:我们已经通过磁控溅射沉积在厚度范围(50-200 nm)内生长了多晶和部分织构的钴膜。生长膜的动力学粗糙化导致受控的rms表面粗糙度值(1 -6 nm)随着生长膜厚度的增加而增加。低能量1 keV Ar +束在掠过入射角(80°)时在钴膜上的离子腐蚀将表面形态改变为纳米波长的波纹图案。在相对较低的流利度下的波长演化在很大程度上取决于初始表面形貌(由此在多晶粗糙表面中并基于阴影不稳定性证实了波长选择机制)。在足够大的流利度下,纹波波长会在粗化状态下稳定增加,并且不会让人联想到原始的表面形态。明显地,使用粗糙的原始表面使得可以在不影响波纹波长的情况下可控制地增加最终图案中的波纹幅度。

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