Surface modification of Al-20Si alloy by high current pulsed electron beam

摘要

Hypereutectic AI-20Si (Si 20 wt%, Al balance)alloy surface was treated with high current pulsed electron beam (HCPEB) under different pulse numbers. The results indicate that HCPEB irradiation induces the formation of metastable structures on the treated surface. The coarse primary Si particle melts, producing a "halo" microstructure with primary Si as the center on the melted surface. A supersaturated solid solution of Al is formed in the melted layer caused by Si atoms dissolving into the Al matrix. Cross-section structure analysis shows that a 4 u,m remelted layer is formed underneath the top surface of the HCEPB-treated sample. Compared with the matrix, the Al and Si elements in the remelted layer are distributed uniformly. In addition, the grains of the AI-20Si alloy surface are refined after HCPEB treatment, as shown by TEM observation. Nano-silicon particles are dispersed on the surface of remelted layer. Polygonal subgrains, approximately 50-100 nm in size, are formed in the Al matrix. The hardness test results show that the microhardness of the ot(Al) and eutectic structure is increased with increasing pulse number. The hardness of the "halo" microstructure presents a gradient change after 15 pulse treatment due to the diffusion of Si atoms. Furthermore, hardness tests of the cross-section at different depths show that the microhardness of the remelted layer is higher than that of the matrix. Therefore, HCPEB technology is a good surface modification method for enhancing the surface hardness of hypereutectic Al-20Si alloy.