Room-temperature processed tin oxide thin film as effective hole blocking layer for planar perovskite solar cells

摘要

Highlights•SnO2hole blocking layer in planar PSC is deposited at room temperature.•Ultrathin SnO2film improves the surface morphology of perovskite layer.•The performance of electron extraction and hole blocking of PSC is improved.•The room-temperature preparation method shows good repeatability.Graphical abstractDisplay OmittedAbstractTin oxide (SnO2) film with high mobility and good transmittance has been reported as a promising semiconductor material for high performance perovskite solar cells (PSCs). In this study, ultrathin SnO2film synthesized by radio frequency magnetron sputtering (RFMS) method at room temperature was employed as hole blocking layer for planar PSCs. The room-temperature sputtered SnO2film not only shows favourable energy band structure but also improves the surface topography of fluorine doped SnO2(FTO) substrate and perovskite (CH3NH3PbI3) layer. Thus, this SnO2hole blocking layer can efficiently promote electron transport and suppress carrier recombination. Furthermore, the best efficiency of 13.68% was obtained for planar PSC with SnO2hole blocking layer prepared at room temperature. This research highlights the room-temperature preparation process of hole blocking layer in PSC and has a certain reference significance for the usage of flexible and low-cost substrates.