机译:3C-SiC / Si(001)外延膜上的声子光谱和扩展X射线吸收精细结构测量
Indiana Univ Penn, Dept Phys, 975 Oakland Ave,56 Weyandt Hall, Indiana, PA 15705 USA|Univ North Florida, Dept Phys, 1 UNF Dr, Jacksonville, FL 32224 USA;
Guangxi Univ, Sch Phys Sci & Technol, Guangxi Key Lab Relativist Astrophys, Lab Optoelect Mat & Detect Technol, Nanning 530004, Peoples R China;
Auburn Univ, Dept Phys, Auburn, AL 36849 USA|Tunku Abdul Rahman Univ Coll, Fac Engn, Dept Mat Engn, Kuala Lumpur 53300, Malaysia;
Natl Taiwan Univ, Grad Inst Elect, Taipei 10617, Taiwan|Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan;
Guangxi Univ, Sch Phys Sci & Technol, Guangxi Key Lab Relativist Astrophys, Lab Optoelect Mat & Detect Technol, Nanning 530004, Peoples R China;
Raman scattering spectroscopy; Infrared reflectivity; Synchrotron radiation x-ray absorption fine structure; Chemical vapor deposition; Brugeeman's effective medium theory;
机译:通过扩展X射线吸收精细结构和衍射异常精细结构测量获得的CdSe / ZnSe量子点局部结构的补充信息
机译:X射线吸收精细结构,X射线激发光致发光和理论研究的6H和3C-SiC微结构和纳米结构的电子结构和光学性质
机译:通过扩展的X射线吸收精细结构测量,Ga掺杂的ZnO中掺杂剂位点周围的局部结构
机译:用原子力显微镜,表面X射线吸收细结构和光学反射和散射测量的电化学沉积铜对P-GaAs(001)的结构研究
机译:使用扩展X射线吸收精细结构技术研究新型材料的局部结构。
机译:高分辨率光谱仪可在6 keV至15 keV的能量范围内扩展X射线吸收精细结构的测量
机译:GaAs(001)上外延Gd2O3中键长应变的扩展X射线吸收精细结构测量