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YBCO films on metal substrates with biaxially aligned MgO bufferlayers

机译:具有双轴取向MgO缓冲层的金属基板上的YBCO膜

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We successfully deposited high quality YBCO films on metal tapes with biaxially aligned MgO buffer layers. e-gun evaporation on inclined substrates with a very high deposition rate of up to 250 nm/min was used for the deposition of the buffer layers. The MgO layers are biaxially textured with an in-plane full width at half maximum of 80. The MgO [001]-axis is not parallel to the substrate normal but tilted significantly towards the deposition direction. YBCO films were deposited on ISD buffer layers by reactive thermal co-evaporation. The critical current density of the films was found to be anisotropic due to the tilt of the [001]-axis. Critical current densities up to 7.9×105 A/cm2 at 77 K were achieved
机译:我们在具有双轴排列的MgO缓冲层的金属带上成功沉积了高质量的YBCO膜。在倾斜基材上以高达250 nm / min的极高沉积速率进行电子枪蒸发,用于沉积缓冲层。 MgO层被双轴织构化,具有面内全宽度(最大值的一半为80)。MgO[001]轴不平行于基板法线,而是朝着沉积方向显着倾斜。通过反应热共蒸发将YBCO膜沉积在ISD缓冲层上。由于[001]轴的倾斜,发现薄膜的临界电流密度是各向异性的。在77 K时实现了高达7.9×105 A / cm2的临界电流密度

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