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首页> 外文期刊>IEEE Transactions on Applied Superconductivity >Epitaxial growth of YBCO thin films on Al/sub 2/O/sub 3/ substrates by pulsed laser deposition
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Epitaxial growth of YBCO thin films on Al/sub 2/O/sub 3/ substrates by pulsed laser deposition

机译:通过脉冲激光沉积在Al / sub 2 / O / sub 3 /衬底上外延生长YBCO薄膜

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摘要

Superconducting YBa/sub 2/Cu/sub 3/O/sub 7-/spl delta// (YBCO) thin films were deposited on CeO/sub 2/ buffered Al/sub 2/O/sub 3/ (alumina and sapphire) substrates by pulsed laser deposition. Superconducting properties of the c-axis YBCO films on these substrates were greatly affected by the growth orientation of CeO/sub 2/ buffer layer. The critical temperature of YBCO film on alumina substrate was /spl sim/83 K. In the case of single crystal substrates, the critical temperature of YBCO thin film was /spl sim/89.5 K, and the critical current density was 1.5/spl times/10/sup 6/ A/cm/sup 2/ at 77 K.
机译:YBaCO / sub 2 / Cu / sub 3 / O / sub 7- / spl delta //超导电YBaCO薄膜沉积在CeO / sub 2 / Al / sub 2 / O / sub 3 /氧化铝和蓝宝石上脉冲激光沉积沉积基板。 CeO / sub 2 /缓冲层的生长方向极大地影响了这些基板上c轴YBCO薄膜的超导性能。氧化铝基板上的YBCO薄膜的临界温度为/ spl sim / 83K。在单晶基板上,YBCO薄膜的临界温度为/ spl sim / 89.5 K,临界电流密度为1.5 / spl倍/ 10 / sup 6 / A / cm / sup 2 /在77 K.

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