The Influence of Concentrated Solar Radiation on the Properties of Ga-0.7In-0.3P/GaP Photoconverters

摘要

The properties of Ga-0.7Ub-0.3P/GaP heterophotoconverters with a two-sided contact grid are studied in the range of solar radiation concentration K-s = 1 — 100 times and with natural convective heat exchange. It is found that, in the considered photoconverters, the dependences of an idle running voltage, the duty cycle of the current—voltage characteristic, and the efficiency on concentration are additionally improved due to high heat conduction of GaP and the temperature stability of the broad-band heterophotoconverter with "transparent" structural design.