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First principles calculations of electronic and optical properties of Mo and C co-doped anatase TiO_2

机译:Mo和C共掺杂锐钛矿TiO_2的电子和光学性质的第一性原理计算

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摘要

Using the first principles calculations, the electronic and optical properties of C, Mo and Mo-C-doped anatase TiO_2 are studied. For the Mo mono-doped TiO_2, the band gap reduces little, and the largest perturbation occurs at the CBM of TiO_2. C mono-doping suppresses the effective band gap, but the partially occupied subbands in the gap probably also serve as the recombination centers for electrons and holes. Therefore, the Mo-C co-doping is investigated for the charge compensation consideration. We discuss six doped configurations and find that the total energy of the system is increased with increasing distance of C and Mo. It is found that co-doped configurations with C nearest to Mo possess the lowest total energy. Then, we focus on discussing three possible Mo-C adjacent co-doped configurations. The subbands mainly induced by C-2p states in the band gap become fully occupied because the Mo atom contributes sufficient electrons to C anion for compensation. At the same time, the effective band gap is narrowed about 0.9 eV and the perturbation at the CBM occurred in Mo mono-doped TiO_2 disappears, which means the band edges of doped system still straddle the redox potentials of water. Furthermore, the optical properties of the compensated Mo-C adjacent co-doped TiO_2 and pure TiO_2 are calculated. The optical absorption edges of the Mo-C co-doped TiO_2 shift towards the visible light region.
机译:利用第一性原理计算,研究了C,Mo和Mo-C掺杂的锐钛矿型TiO_2的电子和光学性质。对于Mo单掺杂TiO_2,带隙几乎没有减小,并且最大扰动发生在TiO_2的CBM处。 C单掺杂抑制了有效带隙,但是在间隙中部分占据的子带也可能充当电子和空穴的复合中心。因此,出于电荷补偿考虑,研究了Mo-C共掺杂。我们讨论了六种掺杂结构,发现系统的总能量随C和Mo距离的增加而增加。发现与C最接近Mo的共掺杂结构具有最低的总能量。然后,我们重点讨论三种可能的Mo-C相邻共掺杂配置。在带隙中,主要由C-2p态诱导的子带被完全占据,因为Mo原子为C阴离子贡献了足够的电子以进行补偿。同时,有效带隙在0.9 eV附近变窄,Mo单掺杂TiO_2中CBM处的扰动消失,这意味着掺杂体系的能带边缘仍然跨越水的氧化还原电位。此外,计算了补偿的Mo-C相邻共掺杂TiO_2和纯TiO_2的光学性质。 Mo-C共掺杂TiO_2的光吸收边缘移向可见光区域。

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  • 来源
    《Applied Physics》 |2014年第2期|831-839|共9页
  • 作者

    H. X. Zhu; J.-M. Liu;

  • 作者单位

    Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China,College of Physical Science and Electronic Techniques, Yancheng Normal University, Yancheng 224002, China;

    Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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