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首页> 外文期刊>Applied Physics Letters >Polarity-controlled visible/infrared electroluminescence in Si-nanocrystal/Si light-emitting devices
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Polarity-controlled visible/infrared electroluminescence in Si-nanocrystal/Si light-emitting devices

机译:Si纳米晶体/ Si发光器件中受极性控制的可见/红外电致发光

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摘要

We report the demonstration of a room-temperature visible/infrared color-switchable light-emitting device comprising a Si nanocrystal-embedded silicon oxide thin film on a p-type Si substrate. The device emits band-edge infrared light from the silicon substrate when the substrate is positively (forward) biased with respect to the Si-nanocrystal film. Under reverse bias, visible emission from the Si-nanocrystal film is observed. Compared to the photoluminescence of the Si-nanocrystal film, the visible electroluminescence is broader and blueshifted to shorter wavelength, and is ascribed to impact ionization in the Si-nanocrystal/SiO2 film.
机译:我们报告了在p型Si衬底上包括一个嵌入Si纳米晶体的氧化硅薄膜的室温可见/红外颜色可切换的发光器件的演示。当衬底相对于Si纳米晶体膜正向(正向)偏置时,该设备会从硅衬底发出带边缘的红外光。在反向偏压下,观察到来自Si纳米晶体膜的可见光发射。与Si-纳米晶体膜的光致发光相比,可见电致发光更宽且蓝移至较短的波长,并且归因于Si-纳米晶体/ SiO 2膜的碰撞电离。

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