A study of resistive switching effects on a thin FeOx transition layer produced at the oxide/iron interface of TiN/SiO2/Fe-contented electrode structures

摘要

Large (≫102) and stable resistance switching characteristics were demonstrated in TiN/SiO2/Fe structure due to the presence of a thin FeOx transition layer at the SiO2/Fe interface, produced spontaneously during the plasma-enhanced tetraethyl orthosilicate oxide deposition process. Addition of Pt into Fe electrode, i.e., a TiN/SiO2/Fe0.73Pt0.27 structure, was observed to improve the data dispersion of switching parameters, associating with the decrease in Fe content inside the FeOx layer. Additionally, current-voltage fitting data shows that current transport mechanism is governed by Ohm’s law in low voltage region and Pool–Frenkel behavior in high voltage region, consisting with FeOx phase transition characteristics.