Electrical transport properties of isolated carbon nanotube/Si heterojunction Schottky diodes

摘要

A detailed study of the electrical transport properties of Pd contacted carbon nanotube (CNT)/Si heterojunctions is presented. The CNT with a diameter ranging from 1.2 to 2.0 nm on n-type Si substrates showed rectifying behavior with the ideality factor of 1.1–2.2 and turn on voltage of 0.05–0.34 V. The current-voltage characteristics of the CNT+-Si diodes were investigated in the temperature range from 50 to 300 K. The transition from thermionic emission to tunneling process was seen in the forward current around 150 K and the Schottky barrier height at Pd/CNT interface is estimated to be 0.3–0.5 eV.