Very high channel conductivity in ultra-thin channel N-polar GaN/(AlN, InAlN, AlGaN) high electron mobility hetero-junctions grown by metalorganic chemical vapor deposition

摘要

Different back barrier designs comprising of AlN, AlGaN, and InAlN layers are investigated for ultra-thin GaN channel N-polar high-electron-mobility-transistors grown by metalorganic chemical vapor deposition. A combinational back barrier with both AlGaN and InAlN materials is proposed. The dependence of channel conductivity on channel thickness is investigated for different back barrier designs. The study demonstrated that the back barrier design of AlN/InAlN/AlGaN is capable of retaining high channel conductivity for ultra-scaled channel thicknesses. For devices with 5-nm-thick channel, a sheet resistance of ～230 Ω/? and mobility ～1400 cm2/V-s are achieved when measured parallel to the multi-step direction of the epi-surface.