Enhanced external quantum efficiency in rectangular single nanowire solar cells

摘要

Single-nanowire solar cells (SNSCs) in lying configuration can have external quantum efficiency (EQE) over 100% but always in narrowbands with EQE peaks slightly exceeding unit. We presented a rectangular gallium arsenide (GaAs) SNSC, which provides light absorption efficiency (Qabs) and EQE far beyond 100% for both transverse electric and magnetic illuminations, by optimally engineering the nanowires and introducing an advanced nanoshell design. Electromagnetic and carrier transport calculations show that Qabs and EQE peaks of the designed SNSCs can both be over 200% with averaged EQE ∼ 150% in most of the active spectral band of GaAs.