Interface roughness scattering in laterally coupled InGaAs quantum wires

摘要

Conductivity of In0.38Ga0.62As quantum wires grown on the u0002311u0003A plane of GaAs was studied usingntemperature dependent Hall effect. Detailed analysis of the scattering phenomena which controlnelectron mobility along the wires indicates that the most significant scattering mechanism whichnlimits electron mobility at low temperatures is scattering from interface roughness. This findingncontributes to the general understanding of the potential to use self-assembled semiconductornquantum wires in the fabrication of thermoelectric devices where one-dimensionality and enhancednscattering at rough boundaries are important. © 2010 American Institute of Physics.nu0004doi:10.1063/1.3532098