Electrically enhanced infrared photoluminescence in Cr:ZnSe

摘要

A sixfold enhancement of infrared u0002IRu0003 photoluminescence u0002PLu0003 from thick single crystal Cr:ZnSenunder electrical excitation is reported. The baseline PL signal is obtained under a charge-transfernband optical seeding. The electrically enhanced IR signal is localized in the vicinity of the cathodenand is shown to be likely related to hole concentration. The various mechanisms involved in this IRnlight emission will be discussed. © 2010 American Institute of Physics. u0004doi:10.1063/1.3431663