Nanoscale imaging and control of resistance switching in VO2

摘要

We demonstrate controlled local phase switching of a VO2 film using a biased conducting atomicnforce microscope tip. After application of an initial, higher “training” voltage, the resistancentransition is hysteretic with IV loops converging upon repeated voltage sweep. The threshold Vsetntoninitiate the insulator-to-metal transition is on order u00045 V at room temperature, and increases at lowntemperature. We image large variations in Vsetnfrom grain to grain. Our imaging technique opens upnthe possibility for an understanding of the microscopic mechanism of phase transition in VO2 asnwell as its potential relevance to solid state devices. © 2010 American Institute of Physics.nu0005doi:10.1063/1.3435466