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MnO_2-doping induced enhanced multiferroicity in Bi_(0.83)Sm_(0.17)Fe_(0.95)Sc_(0.05)O_3 ceramics

机译:MnO_2-Doping诱导Bi_(0.83)SM_(0.17)FE_(0.95)SC_(0.05)O_3陶瓷中的增强的多体性

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摘要

Multiferroic material BiFeO_3 (BFO) that possesses spin and dipole orders simultaneously at ambient temperature shows great potential in multi-state memory and spintronic devices. Nevertheless, the presence of low polarization and weak magnetism in ceramics heavily restricts their applications. Here, the charge compensation method was utilized to reduce leakage current and enhance dielectric breakdown strength (E_b) by introducing MnO_2 in Bi_(0.83)Sm_(0.17)Fe_(0.95)Sc_(0.05)O_3 ceramics. It was revealed that all the ceramics have the coexistence of polar R3c and nonpolar Pnma phases. With increasing MnO_2, E_b is significantly improved, leading to the enhanced ferroelectric polarization. A high remanent polarization of ≈51.54 μC/cm~2 was achieved in the composition with 0.9 wt. % MnO_2 doping, which is the maximum in the reported BFO-based ceramics. Meanwhile, a rather high remanent magnetization of ≈0.31 emu/g was obtained in the same compound. Therefore, this work reveals an interesting route to tailor BFO-based ceramics toward enhanced multiferroicity.
机译:在环境温度下同时具有旋转和偶极子订单的多体材料BIFEO_3(BFO)在多状态存储器和旋转式设备中具有巨大的潜力。然而,陶瓷中低偏振和弱磁性的存在严重限制了它们的应用。这里,利用电荷补偿方法来减少漏电流并通过在Bi_(0.83)SM_(0.17)FE_(0.05)SC_(0.05)O_3陶瓷中引入MNO_2来增强介电击穿强度(E_B)。据透露,所有陶瓷都具有极性R3C和非极性PNMA相的共存。随着MnO_2的增加,E_B显着提高,导致铁电极增强。在用0.9重量%的组合物中达到了≈51.54μC/ cm〜2的高剩余极化。 %MnO_2掺杂,这是报告的基于BFO的陶瓷中的最大值。同时,在相同的化合物中获得了≈0.31emu / g的相当高的剩余磁化。因此,这项工作揭示了定制基于BFO的陶瓷的有趣路线,以增强多态性。

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  • 来源
    《Applied Physics Letters》 |2020年第15期|152901.1-152901.5|共5页
  • 作者单位

    Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials South China Academy of Advanced Optoelectronics South China Normal University Guangzhou 510006 China School of Physics and Wuhan National High Magnetic Field Center Huazhong University of Science and Technology Wuhan 430074 China;

    Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials South China Academy of Advanced Optoelectronics South China Normal University Guangzhou 510006 China;

    Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials South China Academy of Advanced Optoelectronics South China Normal University Guangzhou 510006 China;

    Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials South China Academy of Advanced Optoelectronics South China Normal University Guangzhou 510006 China;

    Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials South China Academy of Advanced Optoelectronics South China Normal University Guangzhou 510006 China;

    Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials South China Academy of Advanced Optoelectronics South China Normal University Guangzhou 510006 China;

    School of Physics and Wuhan National High Magnetic Field Center Huazhong University of Science and Technology Wuhan 430074 China;

    Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials South China Academy of Advanced Optoelectronics South China Normal University Guangzhou 510006 China;

    Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials South China Academy of Advanced Optoelectronics South China Normal University Guangzhou 510006 China;

    Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials South China Academy of Advanced Optoelectronics South China Normal University Guangzhou 510006 China Department of Electrical and Computer Engineering George Mason University Fairfax Virginia 22033 USA;

    Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials South China Academy of Advanced Optoelectronics South China Normal University Guangzhou 510006 China Laboratory of Solid State Microstructures and Innovation Center of Advanced Microstructures Nanjing University Nanjing 21009 China;

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