Precise resistance measurement of quantum anomalous Hall effect in magnetic heterostructure film of topological insulator

摘要

The accuracy of Hall resistance in the quantum anomalous Hall effect has been studied at zero magnetic field using Cr_x(Bi.Sb)_(2-x) Te_3-based magnetic heterostructure films of topological insulators. The measured deviation of the Hall resistance from its theoretical value h/e~2 was less than 2 ppm when the source drain current was 30 nA. This result has verified that the quantization of the Hall resistance is very accurate in the magnetic heterostructure films and in the previously reported uniformly doped films.