Induced charge transfer bridge by non-fullerene surface treatment for high-performance perovskite solar cells

摘要

A facile strategy was developed to simultaneously improve the performance and stability of perovskite solar cells (PSCs). It involves the dissolution of an ultranarrow bandgap material, (2,2 '-((2Z,2 ' Z)-(((4,4,9,9-tetrakis (4-hexylphenyl)-4,9-dihydro-s-indaceno [1,2-b:5,6-b '] dithiophene-2,7-diyl) bis (4-((2-ethylhexyl) oxy) thiophene-5,2-diyl))bis(methanylylidene))bis(5,6-difluoro-3-oxo-2,3-dihydro-1H-indene-2,1-diylidene)) dimalononitrile (IEICO-4F)), in chlorobenzene (antisolvent), the use of the solution in the treatment of perovskite films during spin-coating, and the fabrication of solar cells using the treated perovskite films. IEICO-4F formed a charge transfer bridge at the perovskite/Spiro-OMeTAD interface and improved the charge extraction and transport. Furthermore, the addition of IEICO-4F facilitated the crystallization, improved the surface morphology, and enhanced the passivation of trap sites of perovskite films. Meanwhile, a reliable power conversion efficiency exceeding 20% for CH3NH3PbI3-based cells and 15.72% for CsPbBrI2-based all-inorganic PSCs was realized. These values surpass those of the control devices (i.e., 18.66% and 13.30%, respectively).