12 GHz spontaneous optical bandwidth tunnel junction light-emitting transistor

摘要

In this report, a quantum-well based light-emitting transistor with an Al0.1Ga0.9As/In0.05Ga0.95As tunnel junction collector in a common-emitter configuration with a double-digit gigahertz optical -3 dB bandwidth (f(-3 dB)) is demonstrated. Both the electrical and optical characteristics and the corresponding carrier dynamics are investigated. From microwave measurements, a -3 dB bandwidth up to 12.6 GHz via direct voltage (field) modulation is exhibited when the device is operated in a negative differential resistance state. The voltage-modulated optical characteristics are sensitive to the operation of the base-collector tunnel junction. The "enhanced single-pole optical response" can be attributed to the modulation amplitude decay at low frequencies due to the high impedance at the base-collector junction.