Publisher's Note: 'On direct-writing methods for electrically contacting GaAs and Ge nanowire devices' [Appl. Phys. Lett. 96,223107 (2010)]

Chen Guannan; Gallo Eric M.; Burger Jonadan; Nabet Bahram; Cola Adriano; Prete Paola; Lovergine Nico; Spanier Jonathan E.

首页> 外文期刊>Applied Physics Letters >Publisher's Note: 'On direct-writing methods for electrically contacting GaAs and Ge nanowire devices' [Appl. Phys. Lett. 96,223107 (2010)]

【24h】

Publisher's Note: 'On direct-writing methods for electrically contacting GaAs and Ge nanowire devices' [Appl. Phys. Lett. 96,223107 (2010)]

机译：出版商的注意：“关于电接触GaAs和GE纳米线器件的直接写入方法[Appl。物理。吧。 96,223107（2010）]

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

著录项
相似文献
相关主题

著录项

来源
《Applied Physics Letters》 |2019年第21期|219901.1-219901.1|共1页
作者
Chen Guannan; Gallo Eric M.; Burger Jonadan; Nabet Bahram; Cola Adriano; Prete Paola; Lovergine Nico; Spanier Jonathan E.;
展开▼
作者单位

Drexel Univ Dept Mat Sci & Engn Philadelphia PA 19104 USA;

Drexel Univ Dept Elect & Comp Engn Philadelphia PA 19104 USA;

Drexel Univ Dept Mat Sci & Engn Philadelphia PA 19104 USA;

Drexel Univ Dept Elect & Comp Engn Philadelphia PA 19104 USA;

CNR IMM I-73100 Lecce Italy;

CNR IMM I-73100 Lecce Italy;

Univ Salento Dept Innovat Engn I-73100 Lecce Italy;

Drexel Univ Dept Mat Sci & Engn Philadelphia PA 19104 USA;

展开▼
收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类
关键词

相似文献

外文文献
中文文献
专利

1. Publisher's Note: 'Electrical spin injection in modulation-doped GaAs from an in situ grown Fe/MgO layer' [Appl. Phys. Lett. 107,102407 (2015)] [J] . Seong Hoon Shim, Hyung-jun Kim, Hyun Cheol Koo, Applied Physics Letters . 2015,第20期

机译：发行人注：“从原位生长的Fe / MgO层以调制掺杂的GaAs进行电自旋注入” [Appl。物理来吧107,102407（2015）]
2. Publisher’s Note: “Coaxial carbon nanotube–polythiophene core-shell nanowire for efficient hole transport in heterojunction photovoltaic device” [Appl. Phys. Lett. 99, 143309 (2011)] [J] . Chen Yixuan, Gao He, Luo Yi Applied Physics Letters . 2012,第9期

机译：发行人注：“用于异质结光伏器件中有效空穴传输的同轴碳纳米管-聚噻吩核-壳纳米线” [附录1。物理来吧99，143309（2011）]
3. On direct-writing methods for electrically contacting GaAs and Ge nanowire devices [J] . Guannan Chen, Eric M. Gallo, Joan Burger, Applied Physicsletters . 2010,第22期

机译：关于电接触GaAs和Ge纳米线器件的直接写入方法
4. Novel self-catalyzed GaAs nanowires with electrical contacts [C] . Marcelo R. Piton, Eero Koivusalo, Soile Suomalainen, Symposium on Microelectronics Technology and Devices . 2016

机译：具有电接触的新型自催化GaAs纳米线
5. Methodology to divert electrical energy from the eddy current magnetic resistance device of a hybrid generator used in fitness machines to a grid tie inverter. [D] . Cipollina, Joseph Domenick. 2012

机译：将电能从健身机中使用的混合发电机的涡流磁阻装置转移到并网逆变器的方法。
6. Erratum: Temperature dependence of 1∕f noise mechanisms in silicon nanowire biochemical field effect transistors Appl. Phys. Lett. 97 243501 (2010) [O] . Nitin K. Rajan, David A. Routenberg, Jin Chen, -1

机译：勘误表：硅纳米线生化场效应晶体管中1 ∕ f噪声机制的温度依赖性。物理来吧97243501（2010）
7. Publisher's Note: “On direct-writing methods for electrically contacting GaAs and Ge nanowire devices” Appl. Phys. Lett. 96, 223107 (2010) [O] . Guannan Chen, Eric M. Gallo, Jonadan Burger, 2019

机译：出版商注：“关于电接触GaAs和GE纳米线器件的直接写入方法”应用。物理。吧。 96,223107（2010）

Publisher's Note: 'On direct-writing methods for electrically contacting GaAs and Ge nanowire devices' [Appl. Phys. Lett. 96,223107 (2010)]

著录项

相似文献

相关主题

期刊订阅