机译:出版商注:'基于ALGAN / CAN高电子迁移晶体管的双端子太赫兹探测器[APPL。物理。吧。 115,111101(2019)]
Chinese Acad Sci Suzhou Inst Nanotech & Nanobion SINANO Key Lab Nanodevices & Applicat 398 Ruoshui Rd Suzhou 215123 Peoples R China;
Chinese Acad Sci Suzhou Inst Nanotech & Nanobion SINANO Key Lab Nanodevices & Applicat 398 Ruoshui Rd Suzhou 215123 Peoples R China;
Chinese Acad Sci Suzhou Inst Nanotech & Nanobion SINANO Key Lab Nanodevices & Applicat 398 Ruoshui Rd Suzhou 215123 Peoples R China|Univ Sci & Technol China Sch Nano Technol & Nano Bion Suzhou 215123 Peoples R China;
Chinese Acad Sci Suzhou Inst Nanotech & Nanobion SINANO Key Lab Nanodevices & Applicat 398 Ruoshui Rd Suzhou 215123 Peoples R China;
Suzhou Univ Sci & Technol Coll Elect & Informat Engn Suzhou 215009 Peoples R China;
Chinese Acad Sci Suzhou Inst Nanotech & Nanobion SINANO Key Lab Nanodevices & Applicat 398 Ruoshui Rd Suzhou 215123 Peoples R China;
Chinese Acad Sci Suzhou Inst Nanotech & Nanobion SINANO Key Lab Nanodevices & Applicat 398 Ruoshui Rd Suzhou 215123 Peoples R China;
Chinese Acad Sci Suzhou Inst Nanotech & Nanobion SINANO Key Lab Nanodevices & Applicat 398 Ruoshui Rd Suzhou 215123 Peoples R China;
Chinese Acad Sci Suzhou Inst Nanotech & Nanobion SINANO Key Lab Nanodevices & Applicat 398 Ruoshui Rd Suzhou 215123 Peoples R China;
Chinese Acad Sci Suzhou Inst Nanotech & Nanobion SINANO Key Lab Nanodevices & Applicat 398 Ruoshui Rd Suzhou 215123 Peoples R China;
Chinese Acad Sci Suzhou Inst Nanotech & Nanobion SINANO Key Lab Nanodevices & Applicat 398 Ruoshui Rd Suzhou 215123 Peoples R China;
Chinese Acad Sci Suzhou Inst Nanotech & Nanobion SINANO Key Lab Nanodevices & Applicat 398 Ruoshui Rd Suzhou 215123 Peoples R China;
Chinese Acad Sci Suzhou Inst Nanotech & Nanobion SINANO Key Lab Nanodevices & Applicat 398 Ruoshui Rd Suzhou 215123 Peoples R China;
Russian Acad Sci Kotelnikov Inst Radio Engn & Elect Saratov Branch Saratov 410019 Russia;
机译:出版者注:“关于磁性Weyl半金属Co_3Sn_2S_2的磁化和电子传输的各向异性” [Appl。
机译:出版者的注释:“机械偏置的单晶弛豫器中的热诱导相转换”。
机译:出版商注:'陷阱表征在超宽的带隙AL_(0.65)CA_(0.4)N / AL_(0.4)CA_(0.6)使用ZRO_2栅极电介质使用光学响应和阴极发光'[APPL。物理。吧。 115,213502(2019)]
机译:基于Si CMOS和AlGaN / GaN场效应晶体管的太赫兹检测器设计的优化
机译:勘误表:使用基于氮化镓的高电子迁移率晶体管进行的激酶检测物理来吧103013701(2013)
机译:出版商的注意事项:“基于AlGaN / GaN高电子 - 移动晶体管的双端子太赫兹探测器”Appl。物理。吧。 115,111101(2019)