Influence of van der Waals epitaxy on phase transformation behaviors in 2D heterostructure

摘要

Despite exhibiting their attractive properties and performances, the interlayer interaction in two-dimensional van der Waals epitaxy heterostructures is not well understood. Here, we demonstrate the growth of two dimensional vertically stacked multilayer beta-In2Se3/monolayer WS2 heterostructures via the chemical vapor deposition method. Despite a large lattice misfit (29.9%), the vertically stacked beta-In2Se3/WS2 heterostructures exhibit van der Waals epitaxy with well-aligned lattice orientation of WS2(100)[001]//In2Se3(100)[001], forming a periodic superlattice. Interestingly, a reversible phase transformation of epitaxial beta-In2Se3 has been observed by temperature-dependent Raman spectroscopy and electron diffraction conducted from liquid N-2 to room temperature. Notably, the phase transformation of epitaxial beta-In2Se3 can only be observed when its layer number is larger than 4 and the transformation temperature increases with the increase in the layer number, indicating a layer number dependent phase transformation of epitaxial beta-In2Se3. These results indicate that the confinement effect exists between monolayer WS2 and epitaxial beta-In2Se3, strongly constraining the lattice change of adjacent few layers of beta-In2Se3.