Muon probes of temperature-dependent charge carrier kinetics in semiconductors

摘要

We have applied the photoexcited muon spin spectroscopy technique to intrinsic germanium with the goal of developing a method for characterizing excess carrier kinetics in a wide range of semiconductors. Muon spin relaxation rates can be a unique measure of excess carrier density and utilized to investigate carrier dynamics. By virtue of the localized nature of implanted muons, the obtained carrier lifetime spectrum can be modeled with a simple 1-dimensional diffusion equation to determine bulk recombination lifetime and carrier diffusivity. Temperature dependent studies of these parameters can reveal the recombination and diffusion mechanism.