机译:通过在基于HfO_x的电阻式随机存取存储设备中加入纳米晶体,提高了耐用性和切换速度
Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China;
Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China;
Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China;
Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China;
Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China;
Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China;
机译:通过在ZnO基电阻随机存取存储器件中掺入纳米晶体来提高耐久性
机译:通过接口工程增强了TiN / HfO_x / TiN电阻随机存取存储设备中互补电阻切换的稳定性
机译:Ta / HfO_x灯丝型电阻式随机存取存储器在双层结构中反应性金属层对电阻转换的依赖性
机译:用于电阻随机存取存储器的Al / Sol-Gel ZnO / Al器件的电阻切换
机译:具有多级电阻状态的基于氧化物的电阻式随机存取存储装置的理解和应用
机译:基于TiO2的电阻式随机存取存储设备中的电阻切换的远程控制
机译:出版商注:“钽氮化物电阻随机存取存储器设备的”双极电阻切换特性“Appl。物理。吧。 106,203101(2015)