Hot carrier impact on photovoltage formation in solar cells

摘要

The photovoltaic effect in a GaAs p-n junction exposed to short laser pulses of the 1.06-3.0 mu m spectral range is investigated experimentally. At a low excitation level of 1.06 mu m radiation, the intraband single photon absorption of light dominates, and the photoresponse is found to be caused mainly by the hot carriers. As the laser intensity is increased, the photoresponse signal across the junction consists of two components; the hot carrier photovoltage and the classical photovoltage due to electron-hole pair generation resulting from two-photon absorption. The generation-induced photovoltage decreases with the increase in the radiation wavelength following the reduction of the two-photon absorption coefficient, while the carriers are shown to be heated by the intraband light absorption as well as by residual photon energy left over during the electron-hole pair generation. It is established that carrier heating by light reduces conversion efficiency of a solar cell not only via the thermalization process but also due to the competition of the hot carrier and the classical photovoltages which are of opposite polarities. Published by AIP Publishing.