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Two-dimensional electron gas at manganite buffered LaAlO_3/SrTiO_3 (001) interface by spin coating chemical methods

机译:旋涂化学法在锰矿缓冲的LaAlO_3 / SrTiO_3(001)界面上的二维电子气

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摘要

High mobility spin-polarized two-dimensional electron gas (2DEG) is crucially important for spintronic applications. Here, we report our investigations on the 2DEG fabricated by spin coating a LaAlO3 layer on a (001) SrTiO3 substrate with a La2/3Sr1/3MnO3 buffer layer. When the buffer layer is below 3 uc, the 2DGE is highly mobile. Corresponding to the layer thicknesses of 0, 1, and 2 uc, the Hall mobilities are similar to 24 000 cm(2)/V s, similar to 28 000 cm(2)/V s, and similar to 59 600 cm(2)/V s at 2K. In contrast, the 2DEG with a buffer layer of 3 uc shows a relatively lowmobility (similar to 3000 cm(2)/V s). However, an anomalous Hall effect was observed in this 2DEG below 20 K, indicating a long range ferromagnetic order. This work demonstrates the great potential of the chemical method in gaining high quality spin-polarized 2DEGs at the LaAlO3/SrTiO3 interface. Published by AIP Publishing.
机译:高迁移率自旋极化二维电子气(2DEG)对于自旋电子学应用至关重要。在这里,我们报告了我们对通过旋转涂覆La2 / 3Sr1 / 3MnO3缓冲层在(001)SrTiO3衬底上的LaAlO3层制造的2DEG的研究。当缓冲层低于3 uc时,2DGE具有很高的移动性。对应于0、1和2 uc的层厚度,霍尔迁移率类似于24000 cm(2)/ V s,类似于28000 cm(2)/ V s和类似于59600 cm(2) )/ V s在2K。相比之下,具有3 uc缓冲层的2DEG显示出相对较低的迁移率(类似于3000 cm(2)/ V s)。但是,在低于20 K的2DEG中观察到了异常的霍尔效应,这表明铁磁有长程。这项工作证明了化学方法在LaAlO3 / SrTiO3界面获得高质量自旋极化2DEG方面的巨大潜力。由AIP Publishing发布。

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